Asymmetric threshold voltage VTFET with intrinsic dual channel epitaxy

ABSTRACT

A method is presented for triggering asymmetric threshold voltage along a channel of a vertical transport field effect transistor (VTFET). The method includes constructing a first set fins from a first material, constructing a second set of fins from a second material, forming a source region between the first set of fins, and forming a drain region between the second set of fins, the source region composed of a different material than the drain region. The method further includes depositing a first high-k metal gate over the first set of fins and depositing a second high-k metal gate over the second set of fins, the second high-k metal gate being different than the first high-k metal gate such that the asymmetric threshold voltage is present along the channel of the VTFET in a region defined at the bottom of the first and second set of fins.

BACKGROUND Technical Field

The present invention relates generally to semiconductor devices, andmore specifically, to forming an asymmetric threshold voltage verticaltransport field effect transistor (VTFET) with intrinsic dual channelepitaxy.

Description of the Related Art

In recent years, with increases in the degree of integration,functionality, and speed of semiconductor devices, there is anincreasing demand for miniaturization of semiconductor devices. To meetthe demand, various device structures have been proposed for reducing anarea occupied by transistors over a substrate. Among them, a fieldeffect transistor (FET) having a fin-type structure (FinFET) has drawnattention. FinFETs are three-dimensional structures that rise above thesubstrate and resemble a fin. It is desirable to have improvements inthe fabrication of FinFET transistors to improve quality of transistorcontacts.

SUMMARY

In accordance with an embodiment, a method is provided for triggeringasymmetric threshold voltage along a channel of a vertical transportfield effect transistor (VTFET). The method includes constructing afirst set fins from a first material, constructing a second set of finsfrom a second material, forming a source region between the first set offins, forming a drain region between the second set of fins, the sourceregion composed of a different material than the drain region,depositing a first high-k metal gate over the first set of fins, anddepositing a second high-k metal gate over the second set of fins, thesecond high-k metal gate being different than the first high-k metalgate such that the asymmetric threshold voltage is present along thechannel of the VTFET in a region defined at the bottom of the first andsecond set of fins.

In accordance with another embodiment, a method is provided fortriggering asymmetric threshold voltage along a channel of a verticaltransport field effect transistor (VTFET). The method includes formingconstructing a plurality of carbon doped silicon (Si:C) fins over asubstrate, constructing a plurality of silicon germanium (SiGe) finsover the substrate, forming a silicon doped with phosphorous (Si:P)source region between the plurality of Si:C fins, forming a silicongermanium doped with boron (SiGe:B) drain region between the pluralityof SiGe fins, employing a shallow trench isolation (STI) region toseparate the Si:P source region from the SiGe:B drain region, depositinga first high-k metal gate over the plurality of Si:C fins, anddepositing a second high-k metal gate over the plurality of SiGe finssuch that the asymmetric threshold voltage is present along the channelof the VTFET in a region defined at the bottom of the plurality of Si:Cfins and at the bottom of the plurality of SiGe fins.

In accordance with yet another embodiment, a semiconductor structure isprovided for triggering asymmetric threshold voltage along a channel ofa vertical transport field effect transistor (VTFET). The semiconductorstructure includes a first set fins constructed from a first material, asecond set of fins constructed from a second material, a source regiondisposed between the first set of fins, a drain region disposed betweenthe second set of fins, the source region composed of a differentmaterial than the drain region, a first high-k metal gate disposed overthe first set of fins, and a second high-k metal gate disposed over thesecond set of fins, the second high-k metal gate being different thanthe first high-k metal gate such that the asymmetric threshold voltageis present along the channel of the VTFET in a region defined at thebottom of the first and second set of fins.

It should be noted that the exemplary embodiments are described withreference to different subject-matters. In particular, some embodimentsare described with reference to method type claims whereas otherembodiments have been described with reference to apparatus type claims.However, a person skilled in the art will gather from the above and thefollowing description that, unless otherwise notified, in addition toany combination of features belonging to one type of subject-matter,also any combination between features relating to differentsubject-matters, in particular, between features of the method typeclaims, and features of the apparatus type claims, is considered as tobe described within this document.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The invention will provide details in the following description ofpreferred embodiments with reference to the following figures wherein:

FIG. 1 is a cross-sectional view of a semiconductor structure includingchannel epi over a semiconductor substrate, in accordance with anembodiment of the present invention;

FIG. 2 is a cross-sectional view of the semiconductor structure of FIG.1 where a plurality of fins are formed over the semiconductor substrate,in accordance with an embodiment of the present invention;

FIG. 3 is a cross-sectional view of the semiconductor structure of FIG.2 where bottom source/drain regions are formed, in accordance with anembodiment of the present invention;

FIG. 4 is a cross-sectional view of the semiconductor structure of FIG.3 where bottom spacers are formed over the bottom source/drain regions,in accordance with an embodiment of the present invention;

FIG. 5 is a cross-sectional view of the semiconductor structure of FIG.4 where a high-k metal gate is formed over the plurality of fins, inaccordance with an embodiment of the present invention;

FIG. 6 is a cross-sectional view of the semiconductor structure of FIG.5 where the high-k metal gate is recessed to expose a top portion of theplurality of fins, in accordance with an embodiment of the presentinvention;

FIG. 7 is a cross-sectional view of the semiconductor structure of FIG.6 where gate encapsulation takes place, in accordance with an embodimentof the present invention;

FIG. 8 is a cross-sectional view of the semiconductor structure of FIG.7 where top source/drain regions are formed over and in direct contactwith the exposed top portion of the plurality of fins, in accordancewith an embodiment of the present invention; and

FIG. 9 is a cross-sectional view of the semiconductor structure of FIG.8 where metallization of the top/source drain regions takes place, inaccordance with an embodiment of the present invention.

Throughout the drawings, same or similar reference numerals representthe same or similar elements.

DETAILED DESCRIPTION

Embodiments in accordance with the present invention provide methods anddevices for forming an asymmetric threshold voltage vertical transportfield effect transistor (VTFET) with intrinsic dual channel epitaxy.Vertical FET devices employ doped source and drain regions, where adoped source/drain region for a vertical FET can be formed on top of avertical semiconductor fin, and where a doped source/drain region can beformed underneath the vertical semiconductor fin. In addition, avertical source/drain (S/D) contact of the vertical FET device can bedisposed adjacent to the vertical semiconductor fin as an elongated barcontact. The vertical S/D contact can be formed to make contact to anupper surface of the underlying S/D region, and can be disposed at asufficient distance from the vertical semiconductor fin so that thevertical S/D contact does not electrically short to the vertical metalgate structure formed on the vertical semiconductor fin. What thiseffectively means is that the current path through the doped S/D regionbetween a vertical contact/S/D region interface and a S/D region/channeljunction interface, can be constructed entirely of doped semiconductormaterial. This current path through the doped S/D region, if relativelylong, can result in increased series resistance of the S/D, which inturn reduces a total drive current of the vertical FET device.

Embodiments in accordance with the present invention provide methods anddevices employing techniques for fabricating or constructing verticaltransport field effect transistor (VTFETs) having a gradient thresholdvoltage, which improves device performance due to the enhancement of theelectric field. The gradient threshold voltage of the VTFETs in theexemplary embodiments of the present invention can be achieved by a dualchannel configuration. For n-type field effect transistor (nFET)threshold voltage control, carbon can be employed to decrease thethreshold voltage, whereas for p-type field effect transistor (pFET)threshold voltage control, germanium can be used in the channel. Thus,asymmetric threshold voltage along the channel can be achieved bychannel engineering involving carbon doped silicon (Si:C) incorporationfor an nFET and silicon germanium (SiGe) incorporation for a pFET. Asteep potential distribution near the source side enhances the lateralchannel electric field and thus increases carrier mobility.

Examples of semiconductor materials that can be employed in forming suchstructures include silicon (Si), germanium (Ge), silicon germaniumalloys (SiGe), carbon doped silicon (Si:C), carbon doped silicongermanium carbide (SiGe:C), III-V compound semiconductors and/or II-VIcompound semiconductors. III-V compound semiconductors are materialsthat include at least one element from Group III of the Periodic Tableof Elements and at least one element from Group V of the Periodic Tableof Elements. II-VI compound semiconductors are materials that include atleast one element from Group II of the Periodic Table of Elements and atleast one element from Group VI of the Periodic Table of Elements.

It is to be understood that the present invention will be described interms of a given illustrative architecture; however, otherarchitectures, structures, substrate materials and process features andsteps/blocks can be varied within the scope of the present invention. Itshould be noted that certain features cannot be shown in all figures forthe sake of clarity. This is not intended to be interpreted as alimitation of any particular embodiment, or illustration, or scope ofthe claims.

FIG. 1 is a cross-sectional view of a semiconductor structure includingchannel epi over a semiconductor substrate, in accordance with anembodiment of the present invention.

In various exemplary embodiments, a semiconductor structure 5 isdepicted where a first material 12 and a second material 14 areepitaxially grown over a semiconductor substrate 10. The first material12 can be, e.g., carbon doped silicon (Si:C) and the second material 14can be, e.g., silicon germanium (SiGe). The carbon (C) and germanium(Ge) concentrations are low enough to avoid any defects.

The substrate 10 can be crystalline, semi-crystalline, microcrystalline,or amorphous. The substrate 10 can be essentially (e.g., except forcontaminants) a single element (e.g., silicon), primarily (e.g., withdoping) of a single element, for example, silicon (Si) or germanium(Ge), or the substrate 10 can include a compound, for example, Al₂O₃,SiO₂, GaAs, SiC, or SiGe. The substrate 10 can also have multiplematerial layers. In some embodiments, the substrate 10 includes asemiconductor material including, but not necessarily limited to,silicon (Si), silicon germanium (SiGe), Si:C (carbon doped silicon),carbon doped silicon germanium (SiGe:C), carbon doped silicon germanium(SiGe:C), III-V (e.g., GaAs, AlGaAs, InAs, InP, etc.), II-V compoundsemiconductor (e.g., ZnSe, ZnTe, ZnCdSe, etc.) or other likesemiconductor. In addition, multiple layers of the semiconductormaterials can be used as the semiconductor material of the substrate 10.In some embodiments, the substrate 10 includes both semiconductormaterials and dielectric materials.

FIG. 2 is a cross-sectional view of the semiconductor structure of FIG.1 where a plurality of fins are formed over the semiconductor substrate,in accordance with an embodiment of the present invention.

In various exemplary embodiments, the first material 12 and the secondmaterial 14 are etched to form a plurality of fins 12, 14. A first setof fins 12 are formed from Si:C, whereas a second set of fins 14 areformed from SiGe. A hardmask 16 is formed over the first set of fins 12and over the second set of fins 14. The first set of fins 12 will enablethe formation of an n-type field effect transistor (nFET) device in annFET region 20 and the second set of fins 14 will enable the formationof a p-type field effect transistor (pFET) device in a pFET region 22.

The plurality of fins 12, 14 can be formed from a semiconductor materialincluding, but not limited to Si, strained Si, Si:C, SiGe, SiGe:C, Sialloys, Ge, Ge alloys, GaAs, InAs, InP, as well as other III/V and II/VIcompound semiconductors. The plurality of fins 12, 14 can be etched byemploying, e.g., a reactive ion etch (RIE) or the like. In otherembodiments, the etching can include a dry etching process such as, forexample, reactive ion etching, plasma etching, ion etching or laserablation. The etching can further include a wet chemical etching processin which one or more chemical etchants are employed to remove portionsof the layers.

The hardmask 16 can be manufactured of silicon nitride (SiN), depositedusing, for example, low pressure chemical vapor deposition (LPCVD). Inother example embodiments, the hardmask 16 can include, but is notlimited to, hafnium oxide (HfO₂) or tantalum nitride (TaN) or titaniumnitride (TiN). In some embodiments, the hardmask 16 can include multiplelayers, for example, silicon nitride on top of silicon oxide. In someembodiments, the vertical thickness of the hardmask 16 ranges from about30 nm to about 150 nm. The hardmask 16 can be formed by any suitablepatterning technique, including but not limited to, sidewall imagetransfer (SIT), self-aligned double patterning (SADP), self-alignedquadruple patterning (SAQP), lithography followed by etching, etc.

FIG. 3 is a cross-sectional view of the semiconductor structure of FIG.2 where bottom source/drain regions are formed, in accordance with anembodiment of the present invention.

In various exemplary embodiments, bottom source/drain regions 26, 28 areformed. The source/drain regions 26 can be formed in the nFET region 20and source/drain regions 28 can be formed in the pFET region 22.Additionally, a shallow trench isolation (STI) region 30 can be formedbetween the nFET region 20 and the pFET region 22. The STI region 30 canseparate the source/drain region 26 of the nFET from the source/drainregion 28 of the pFET.

Bottom source/drain regions 26, 28 can be epitaxially grown over thesubstrate 10. Source/drain regions 26, 28 can be, e.g., Si:P for an nFET(nFET region 20) and SiGe:B for a pFET (pFET region 22). It is to beunderstood that the term “source/drain region” as used herein means thata given source/drain region can be either a source region or a drainregion, depending on the application. In one exemplary embodiment, thesource 26 is formed between the Si:C fins 12 in the nFET region 20 andthe drain 28 is formed between the SiGe fins 14 in the pFET region 22.

The terms “epitaxial growth” and “epitaxial deposition” refer to thegrowth of a semiconductor material on a deposition surface of asemiconductor material, in which the semiconductor material being grownhas substantially the same crystalline characteristics as thesemiconductor material of the deposition surface. The term “epitaxialmaterial” denotes a material that is formed using epitaxial growth. Insome embodiments, when the chemical reactants are controlled and thesystem parameters set correctly, the depositing atoms arrive at thedeposition surface with sufficient energy to move around on the surfaceand orient themselves to the crystal arrangement of the atoms of thedeposition surface. Thus, in some examples, an epitaxial film depositedon a {100} crystal surface will take on a {100} orientation.

Shallow trench isolation (STI) structure 30 is formed in the substrate10 to electrically isolate regions of adjacent semiconductor devicesthat are formed over the substrate 10. STI structure 30 can includeoxide (STI oxide), and STI structure 30 can have a corresponding STIstep height.

FIG. 4 is a cross-sectional view of the semiconductor structure of FIG.3 where bottom spacers are formed over the bottom source/drain regions,in accordance with an embodiment of the present invention.

In various exemplary embodiments, bottom spacers 32 can be formed overthe bottom source/drain regions 26, 28 in the nFET region 20 and thepFET region 22.

Bottom spacers 32 can include a low-k dielectric formed according toknown processes. The term “low-k dielectric” generally refers to aninsulating material having a dielectric constant less than silicondioxide, e.g., less than 3.9. Exemplary low-k dielectric materialsinclude, but are not limited to, dielectric nitrides (e.g., SiN, SiBCN),dielectric oxynitrides (e.g., SiOCN, SiCO), or any combination thereofor the like.

FIG. 5 is a cross-sectional view of the semiconductor structure of FIG.4 where a high-k metal gate is formed over the plurality of fins, inaccordance with an embodiment of the present invention.

In various exemplary embodiments, a high-k metal gate is formed over theplurality of fins. The high-k material layer 34 extends over the firstset of fins 12 and the second set of fins 14. A metal gate 36 is thenformed over the high-k material layer 34 in the nFET region 20 and ametal gate 38 is then formed over the high-k material layer 34 in thepFET region 22. Thus, the metal gate 36 extends to point 39 defined overthe STI region 30 and metal gate 38 extends from point 39 over the STIregion 30 and into the pFET region 22.

The high-k layer 34 can include a hafnium oxide (HfO₂) layer depositedto a thickness of approximately 2 nm. High-k layer 34 can be formedusing ALD, which involves the deposition of successive monolayers over asubstrate within a deposition chamber usually maintained atsub-atmospheric pressure. Furthermore, it will be appreciated that“high-k” generally refers to a dielectric material having a dielectricconstant (k) value greater than that of silicon oxide. Preferably, thehigh-k material has a dielectric constant greater than 5, morepreferably greater than about 10. Exemplary high-k materials include,without limitation, HfO₂, ZrO₂, Al₂O₃, TiO₂, Ta₂O₅, lanthanide oxidesand mixtures thereof, silicates and materials such as YSZ(yttria-stabilized zirconia), BST, BT, ST, and SBT.

nWFM layer 36 can be selectively grown over high-k layer 34 and caninclude aluminum (Al) or an aluminum/titanium (Al/Ti) multilayer stack,where the Al/Ti thickness can be tuned for target composition ratio toachieve the desired work function. Both Al and Ti could be selectivelygrown. In other exemplary embodiments, the nWFM layer 36 can be, e.g.,TiN, TiAlC, TaN, etc. In one embodiment, the nWFM layer 36 is amulti-layered stack including TiN/TiAlC/TiN.

pWFM layer 38 can be selectively grown over high-k layer 34 and caninclude TiN.

Therefore, a high-k material 34 can be formed, followed by formation ofwork function metal (WFM) layers 36, 38 according to one polarity device(for example nFET or pFET) on the wafer and according to anotherpolarity device (for example nFET or pFET). It is appreciated that annFET uses one type of WFM and a pFET uses another type of WFM. In oneexample, the WFM layer 38 can be TiN for a pFET, and the WFM layer 36can be Al-doped TiN or TaN, or a multi-layered stack includingTiN/TiAlC/TiN, for an nFET.

FIG. 6 is a cross-sectional view of the semiconductor structure of FIG.5 where the high-k metal gate is recessed to expose a top portion of theplurality of fins, in accordance with an embodiment of the presentinvention.

In various exemplary embodiments, an organic planarization layer (OPL)40 is deposited between the first set of fins 12 and the second set offins 14. Then, the OPL 40 and the high-k metal gates 34, 36 and 34, 38are recessed to expose top portions 12′, 14′ of the plurality of fins12, 14. The recess can extend a distance “H₁.” The recess furthercreates openings 42 between the exposed top portions 12′, 14′ of theplurality of fins 12, 14. The recess exposes sidewalls 13 of top portion12′ of fins 12. The recess further exposes sidewalls 15 of top portions14′ of fins 14. Additionally, the hardmask 16 remains over the pluralityof fins 12, 14. The top surface 18 and sidewalls 17 of the hardmask 16are thus exposed.

FIG. 7 is a cross-sectional view of the semiconductor structure of FIG.6 where gate encapsulation takes place, in accordance with an embodimentof the present invention.

In various exemplary embodiments, gate encapsulation takes place. Gateencapsulation can include deposition of a first gate encapsulation layer46 and a second gate encapsulation layer 48. The first gateencapsulation layer 46 can be a nitride, such as, e.g., SiN or SiBCN.The second gate encapsulation layer 48 can be an oxide, such as, e.g.,SiO₂. The first gate encapsulation layer 46 is deposited over theplurality of fins 12, 14, whereas the second gate encapsulation layer 48is deposited between the plurality of fins 12, 14.

The second gate encapsulation layer 48 can be planarized. Theplanarizing process can include chemical mechanical polishing (CMP)followed by an etch process. Thus, the planarization process can beprovided by CMP. Other planarization processes can include grinding andpolishing.

FIG. 8 is a cross-sectional view of the semiconductor structure of FIG.7 where top source/drain regions are formed over and in direct contactwith the exposed top portion of the plurality of fins, in accordancewith an embodiment of the present invention.

In various exemplary embodiments, the first and second gateencapsulation layers 46, 48 are recessed until the top portions 12′, 14′of the plurality of fins 12, 14, respectively, are exposed. This resultsin the removal of the hardmask 26 and having a remaining oxide 48′. Thehigh-k layer 34, the nWFM 36 in the nFET region 20, and pWFM 38 in thepFET region 22 remain intact from the recess of the first and secondgate encapsulation layers 46, 48. The top portion of the high-k layer34, the nWFM 36 in the nFET region 20, and pWFM 38 in the pFET region 22are protected by a remaining section of the first encapsulation layer46.

Recessing the layers 46, 48 can be performed by wet etch processing. Inone example, a vertical wet etch can be employed to define the channellength. Non-limiting examples of wet etch processes that can be used toform the recess include hydrogen peroxide (H2O2), potassium hydroxide(KOH), ammonium hydroxide (ammonia), tetramethylammonium hydroxide(TMAH), hydrazine, or ethylene diamine pyrocatechol (EDP), or anycombination thereof.

Subsequently, top source/drain regions 50 are formed over the exposedtop portions 12′ of the fins 12 in the nFET region 20 and topsource/drain regions 52 are formed over the exposed top portions 14′ ofthe fins 14 in the pFET region 22.

Top source/drain regions 50, 52 can be epitaxially grown. Source/drainregions 50, 52 can be, e.g., Si:P for an nFET (in nFET region 20) andSiGe:B for a pFET (in pFET region 22). Thus, the top source/drain regionis different for the Si:C fins 12 compared to the top source/drainregion for the SiGe fins 14. It is to be understood that the term“source/drain region” as used herein means that a given source/drainregion can be either a source region or a drain region, depending on theapplication.

FIG. 9 is a cross-sectional view of the semiconductor structure of FIG.8 where metallization of the top/source drain regions takes place, inaccordance with an embodiment of the present invention.

In various exemplary embodiments, top spacers 58 are formed. Top spacermaterial 58 can be formed over the entire structure. To spacers 58 candirectly contact a lower region of the top source/drain regions 50, 52.Examples of top spacer material 58 can include oxides and nitrides (suchas, e.g., SiN, SiBCN, SiOCN). The top spacer material 58 can be a low-kdielectric material. In one implementation, the top spacer material 58can be formed with techniques analogous to forming the bottom spacermaterial 32. The bottom spacer material 32 can be thicker than the topspacer material 58.

In various exemplary embodiments, metallization of the top/source drainregions takes place. The metallization includes forming metal layer 54.The metal layer 54 contacts and encapsulates or encompasses topsource/drain regions 50 in the nFET region 20 and top source/drainregions 52 in the pFET region 22. Additionally, contacts 56 can beformed through the metal layer 54. Contacts 56 can be source, drain,gate contacts. Area 62 can be referred to as the drain and area 64 canbe referred to as the source. A gradient threshold voltage can beachieved in regions 60 near the source area 64.

In one exemplary embodiment, the metal layer 54 can be, e.g., atitanium/titanium nitride (Ti/TiN) layer or liner. In other exemplaryembodiments, the metal layer 54 can be formed from, e.g., Ti, TiN, Ni,etc. The metal layer 54 can be deposited by, e.g., an ALD process. Themetal layer 54 can be planarized. The planarizing process can includechemical mechanical polishing (CMP) followed by an etch process.Therefore, the planarization process can be provided by CMP. Otherplanarization processes can include grinding and polishing.

Consequently, the exemplary embodiments of the present invention have agradient threshold voltage in the VTFETs, which improves deviceperformance due to the enhancement of the electric field. The gradientthreshold voltage of the VTFETs in the exemplary embodiments of thepresent invention can be achieved by a dual channel configuration. FornFET threshold voltage control, carbon can be employed to decrease thethreshold voltage, whereas for the pFET threshold voltage control,germanium can be used in the channel (pFET Vt controlled by Geconcentration in the channel). Thus, asymmetric threshold voltage alongthe channel can be achieved by channel engineering involving Si:Cincorporation for an nFET and SiGe incorporation of a pFET. Theasymmetric threshold voltage profile can be seen at area 60 where asteep potential distribution near the source side enhances the lateralchannel electric field and thus increases carrier mobility.

Regarding FIGS. 1-9, deposition is any process that grows, coats, orotherwise transfers a material onto the wafer. Available technologiesinclude, but are not limited to, thermal oxidation, physical vapordeposition (PVD), chemical vapor deposition (CVD), electrochemicaldeposition (ECD), molecular beam epitaxy (MBE) and more recently, atomiclayer deposition (ALD) among others. As used herein, “depositing” caninclude any now known or later developed techniques appropriate for thematerial to be deposited including but not limited to, for example:chemical vapor deposition (CVD), low-pressure CVD (LPCVD),plasma-enhanced CVD (PECVD), semi-atmosphere CVD (SACVD) and highdensity plasma CVD (HDPCVD), rapid thermal CVD (RTCVD), ultra-highvacuum CVD (UHVCVD), limited reaction processing CVD (LRPCVD),metal-organic CVD (MOCVD), sputtering deposition, ion beam deposition,electron beam deposition, laser assisted deposition, thermal oxidation,thermal nitridation, spin-on methods, physical vapor deposition (PVD),atomic layer deposition (ALD), chemical oxidation, molecular beamepitaxy (MBE), plating, evaporation.

The term “processing” as used herein includes deposition of material orphotoresist, patterning, exposure, development, etching, cleaning,stripping, implanting, doping, stressing, layering, and/or removal ofthe material or photoresist as needed in forming a described structure.

Removal is any process that removes material from the wafer: examplesinclude etch processes (either wet or dry), and chemical-mechanicalplanarization (CMP), etc.

Patterning is the shaping or altering of deposited materials, and isgenerally referred to as lithography. For example, in conventionallithography, the wafer is coated with a chemical called a photoresist;then, a machine called a stepper focuses, aligns, and moves a mask,exposing select portions of the wafer below to short wavelength light;the exposed regions are washed away by a developer solution. Afteretching or other processing, the remaining photoresist is removed.Patterning also includes electron-beam lithography.

Modification of electrical properties can include doping, such as dopingtransistor sources and drains, generally by diffusion and/or by ionimplantation. These doping processes are followed by furnace annealingor by rapid thermal annealing (RTA). Annealing serves to activate theimplanted dopants.

It is to be understood that the present invention will be described interms of a given illustrative architecture; however, otherarchitectures, structures, substrate materials and process features andsteps/blocks can be varied within the scope of the present invention.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements can also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements can be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

The present embodiments can include a design for an integrated circuitchip, which can be created in a graphical computer programming language,and stored in a computer storage medium (such as a disk, tape, physicalhard drive, or virtual hard drive such as in a storage access network).If the designer does not fabricate chips or the photolithographic masksused to fabricate chips, the designer can transmit the resulting designby physical mechanisms (e.g., by providing a copy of the storage mediumstoring the design) or electronically (e.g., through the Internet) tosuch entities, directly or indirectly. The stored design is thenconverted into the appropriate format (e.g., GDSII) for the fabricationof photolithographic masks, which include multiple copies of the chipdesign in question that are to be formed on a wafer. Thephotolithographic masks are utilized to define areas of the wafer to beetched or otherwise processed.

Methods as described herein can be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case, the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case, the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

It should also be understood that material compounds will be describedin terms of listed elements, e.g., SiGe. These compounds includedifferent proportions of the elements within the compound, e.g., SiGeincludes Si_(x)Ge_(1-x) where x is less than or equal to 1, etc. Inaddition, other elements can be included in the compound and stillfunction in accordance with the present embodiments. The compounds withadditional elements will be referred to herein as alloys. Reference inthe specification to “one embodiment” or “an embodiment” of the presentinvention, as well as other variations thereof, means that a particularfeature, structure, characteristic, and so forth described in connectionwith the embodiment is included in at least one embodiment of thepresent invention. Thus, the appearances of the phrase “in oneembodiment” or “in an embodiment”, as well any other variations,appearing in various places throughout the specification are notnecessarily all referring to the same embodiment.

It is to be appreciated that the use of any of the following “/”,“and/or”, and “at least one of”, for example, in the cases of “A/B”, “Aand/or B” and “at least one of A and B”, is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of both options (A andB). As a further example, in the cases of “A, B, and/or C” and “at leastone of A, B, and C”, such phrasing is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of the third listedoption (C) only, or the selection of the first and the second listedoptions (A and B) only, or the selection of the first and third listedoptions (A and C) only, or the selection of the second and third listedoptions (B and C) only, or the selection of all three options (A and Band C). This can be extended, as readily apparent by one of ordinaryskill in this and related arts, for as many items listed.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises,” “comprising,” “includes” and/or “including,” when usedherein, specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of one or more other features, integers, steps, operations,elements, components and/or groups thereof.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like, can be used herein for ease of description todescribe one element's or feature's relationship to another element(s)or feature(s) as illustrated in the FIGS. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the FIGS. For example, if the device in theFIGS. is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the term “below” can encompass both an orientation ofabove and below. The device can be otherwise oriented (rotated 90degrees or at other orientations), and the spatially relativedescriptors used herein can be interpreted accordingly. In addition, itwill also be understood that when a layer is referred to as being“between” two layers, it can be the only layer between the two layers,or one or more intervening layers can also be present.

It will be understood that, although the terms first, second, etc. canbe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another element. Thus, a first element discussed belowcould be termed a second element without departing from the scope of thepresent concept.

Having described preferred embodiments of a method for forming anasymmetric threshold voltage vertical transport field effect transistor(VTFET) with intrinsic dual channel epitaxy (which are intended to beillustrative and not limiting), it is noted that modifications andvariations can be made by persons skilled in the art in light of theabove teachings. It is therefore to be understood that changes may bemade in the particular embodiments described which are within the scopeof the invention as outlined by the appended claims. Having thusdescribed aspects of the invention, with the details and particularityrequired by the patent laws, what is claimed and desired protected byLetters Patent is set forth in the appended claims.

What is claimed is:
 1. A method for triggering asymmetric thresholdvoltage along a channel of a vertical transport field effect transistor(VTFET), the method comprising: constructing a first set fins from afirst material; constructing a second set of fins from a secondmaterial; forming a source region between the first set of fins; forminga drain region between the second set of fins, the source regioncomposed of a different material than the drain region; depositing afirst high-k metal gate over the first set of fins; and depositing asecond high-k metal gate over the second set of fins, the second high-kmetal gate being different than the first high-k metal gate such thatthe asymmetric threshold voltage is present along the channel of theVTFET in a region defined at the bottom of the first and second set offins.
 2. The method of claim 1, further comprising recessing the firstand second high-k metal gates to expose top portions of the first andsecond set of fins.
 3. The method of claim 2, further comprisingdisposing encapsulation layers over the first and second set of fins. 4.The method of claim 3, further comprising recessing the encapsulationlayers to expose the top portions of the first and second set of fins.5. The method of claim 4, further comprising forming top source/drainregions over the exposed top portions of the first and second set offins.
 6. The method of claim 5, further comprising forming a metal fillover the top source/drain regions.
 7. The method of claim 1, wherein thefirst material is carbon doped silicon (Si:C) and the second material issilicon germanium (SiGe).
 8. The method of claim 1, wherein a shallowtrench isolation (STI) region separates the source region from the drainregion.
 9. The method of claim 1, further comprising forming a bottomspacer before deposition of the first and second high-k metal gates. 10.The method of claim 1, wherein the metal gate of the first high-k metalgate is a multi-layered stack including titanium nitride/titaniumaluminum carbide/titanium nitride (TiN/TiAlC/TiN) and the metal gate ofthe second high-k metal gate is titanium nitride (TiN).
 11. A method fortriggering asymmetric threshold voltage along a channel of a verticaltransport field effect transistor (VTFET), the method comprising:constructing a plurality of carbon doped silicon (Si:C) fins over asubstrate; constructing a plurality of silicon germanium (SiGe) finsover the substrate; forming a silicon doped with phosphorous (Si:P)source region between the plurality of Si:C fins; forming a silicongermanium doped with boron (SiGe:B) drain region between the pluralityof SiGe fins; employing a shallow trench isolation (STI) region toseparate the Si:P source region from the SiGe:B drain region; depositinga first high-k metal gate over the plurality of Si:C fins; anddepositing a second high-k metal gate over the plurality of SiGe finssuch that the asymmetric threshold voltage is present along the channelof the VTFET in a region defined at the bottom of the plurality of Si:Cfins and at the bottom of the plurality of SiGe fins.
 12. The method ofclaim 11, further comprising recessing the first and second high-k metalgates to expose top portions of the plurality of Si:C fins and theplurality of SiGe fins.
 13. The method of claim 12, further comprisingdisposing encapsulation layers over the plurality of Si:C fins and theplurality of SiGe fins.
 14. The method of claim 13, further comprisingrecessing the encapsulation layers to expose the top portions of theplurality of Si:C fins and the plurality of SiGe fins.
 15. The method ofclaim 14, further comprising forming top source/drain regions over theexposed top portions of the plurality of Si:C fins and the plurality ofSiGe fins.
 16. The method of claim 15, further comprising forming ametal fill over the top source/drain regions.
 17. The method of claim11, wherein the metal gate of the first high-k metal gate is amulti-layered stack including titanium nitride/titanium aluminumcarbide/titanium nitride (TiN/TiAlC/TiN) and the metal gate of thesecond high-k metal gate is titanium nitride (TiN).